Design guidelines for a highly efficient high-purity germanium (HPGe)-based double-heterojunction solar cell

نویسندگان

چکیده

In spite of having higher carrier mobilities and absorption coefficients germanium (Ge) than those silicon (Si), there has been less focus on Ge-based solar cells due to the low bandgap high-cost Ge wafer as well requirement its high-purity level. Currently, availability (HPGe), low-cost slicing method proper design guidelines make it possible HPGe-based cells. Accordingly, in this article, we have designed simulated a novel n-CdS/p-HPGe/p+-BaSi2 based npp+ double-heterojunction cell, where HPGe, cadmium sulfide (CdS) orthorhombic barium disilicide (beta-BaSi2) used absorber, window back-surface field (BSF) layers, respectively. Using cell capacitance simulator (SCAPS-1D), effects different physical parameters such thickness, doping defect densities, band offsets temperature photovoltaic (PV) investigated systematically. This article renders optimized PV improve device performance with highest power conversion efficiency (PCE) ~45.65% high open-circuit voltage 1.16 V owing built-in 1.7 for is almost consistent detailed-balance limit double heterojunction cell.

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ژورنال

عنوان ژورنال: Optics and Laser Technology

سال: 2021

ISSN: ['0030-3992', '1879-2545']

DOI: https://doi.org/10.1016/j.optlastec.2021.107306